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DMN2104L
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
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Case: SOT-23
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53m Ω @V GS = 4.5V
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Case Material: Molded Plastic, “Green” Molding Compound.
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? 104m Ω @V GS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
Source
G
S
Maximum Ratings
TOP VIEW
@T A = 25°C unless otherwise specified
Equivalent Circuit
TOP VIEW
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Symbol
V DSS
V GSS
I D
I DM
Value
20
±12
4.3
15
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
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500
± 100
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.45
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?
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42
84
6.6
0.7
1.4
53
104
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1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 4.2A
V GS = 2.5V, I D = 3.1A
V DS =5V, I D = 4.2A
V GS = 0V, I S = 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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325
92
70
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pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R θ JA = 90°C/W.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
DMN2104L
Document number: DS31560 Rev. 1 - 2
1 of 4
www.diodes.com
October 2008
? Diodes Incorporated
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